通用
| 基础料号 | MT3S113 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Product Status | Active |
| Transistor Type | NPN |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Power - Max | 800mW |
| Frequency - Transition | 12.5GHz |
| Gain | 11.8dB |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| 供应商器件封装 | S-Mini |
环境
| 工作温度 | 150°C (TJ) |
|---|