通用
| 基础料号 | HN4C06 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Not For New Designs |
| Transistor Type | 2 NPN (Dual) Common Emitter |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 120V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-74A, SOT-753 |
| 供应商器件封装 | SMV |
环境
| 工作温度 | 150°C (TJ) |
|---|