通用
| 基础料号 | HN1C03 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 20V |
|---|---|
| Current - Collector (Ic) (Max) | 300mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 4mA, 2V |
| Power - Max | 200mW |
| Frequency - Transition | 30MHz |
机械
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
|---|---|
| 供应商器件封装 | US6 |
环境
| 工作温度 | 150°C (TJ) |
|---|