通用
| 基础料号 | HN1B01 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 120MHz, 150MHz |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| 供应商器件封装 | US6 |
环境
| Grade | Automotive |
|---|---|
| Qualification | AEC-Q101 |