通用
| 基础料号 | GT60N321 |
|---|---|
| 输入类型 | Standard |
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 2.5 µs |
| Td (on/off) @ 25°C | 330ns/700ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 170 W |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-3PL |
| 供应商器件封装 | TO-3P(LH) |
环境
| 工作温度 | 150°C (TJ) |
|---|