GT50J121(Q)

Toshiba Semiconductor and Storage

GT50J121(Q)

模拟与电源

IGBT 600V 50A 240W TO3P LH

停产/老旧TO-3PL模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号GT50J121
输入类型Standard
制造商Toshiba Semiconductor and Storage
安装类型Through Hole
Product StatusObsolete
Switching Energy1.3mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 50A, 13Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)100 A
Power - Max240 W

机械

封装Tube
Package / CaseTO-3PL
供应商器件封装TO-3P(LH)

环境

工作温度150°C (TJ)