GT40QR21(STA1,E,D

Name: GT40QR21(STA1,E,D
Brand: Toshiba Semiconductor and Storage

模拟与电源

DISCRETE IGBT TRANSISTOR TO-3PN(

在产TO-3P-3, SC-65-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

基础料号	GT40QR21
输入类型	Standard
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Active
Reverse Recovery Time (trr)	600 ns
Switching Energy	-, 290µJ (off)
Test Condition	280V, 40A, 10Ohm, 20V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A

Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Power - Max	230 W

工作温度	175°C(TJ)