GT30N135SRA,S1E

Toshiba Semiconductor and Storage

GT30N135SRA,S1E

Datasheet

模拟与电源

D-IGBT TO-247 VCES=1350V IC=30A

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge270 nC
输入类型Standard
制造商Toshiba Semiconductor and Storage
安装类型Through Hole
Product StatusActive
Switching Energy-, 1.3mJ (off)
Test Condition300V, 60A, 39Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 60A

电气

Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Power - Max348 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247

环境

工作温度175°C (TJ)