GT20J341,S4X(S

Toshiba Semiconductor and Storage

GT20J341,S4X(S

Datasheet

模拟与电源

DISCRETE IGBT TRANSISTOR TO-220S

在产TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

输入类型Standard
制造商Toshiba Semiconductor and Storage
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)90 ns
Switching Energy500µJ (on), 400µJ (off)
Td (on/off) @ 25°C60ns/240ns
Test Condition300V, 20A, 33Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)80 A
Power - Max45 W

机械

封装Tube
Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220SIS

环境

工作温度150°C(TJ)