GT10J312(Q)

Name: GT10J312(Q)
Brand: Toshiba Semiconductor and Storage

模拟与电源

IGBT 600V 10A 60W TO220SM

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

基础料号	GT10J312
输入类型	Standard
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Obsolete
Reverse Recovery Time (trr)	200 ns
Td (on/off) @ 25°C	400ns/400ns
Test Condition	300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A

Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Power - Max	60 W

封装	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

工作温度	150°C (TJ)