2SK3662(F)

Name: 2SK3662(F)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 60V 35A TO220NIS

停产/老旧TO-220-3 Full Pack模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	12.5mOhm @ 18A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5120 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Through Hole
Product Status	Obsolete
系列	U-MOSIII
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
最大功耗	35W (Tc)

工作温度	150°C(TJ)