2SK2883(TE24L,Q)

Name: 2SK2883(TE24L,Q)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET N-CH 800V 3A TO220SM

停产/老旧TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
最大功耗	75W (Tc)

工作温度	150°C (TJ)