2SJ610(TE16L1,NQ)

Name: 2SJ610(TE16L1,NQ)
Brand: Toshiba Semiconductor and Storage

模拟与电源

MOSFET P-CH 250V 2A PW-MOLD

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.55Ohm @ 1A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	381 pF @ 10 V
制造商	Toshiba Semiconductor and Storage
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 1mA

漏源电压	250 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
最大功耗	20W (Ta)

工作温度	150°C (TJ)