通用
| 制造商 | Toshiba Semiconductor and Storage |
|---|---|
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 800mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 375 V |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Power - Max | 1.1 W |
机械
| 封装 | Box |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| 供应商器件封装 | PW-MOLD2 |
环境
| 工作温度 | 150°C (TJ) |
|---|