通用
| 基础料号 | 2SA1930 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Power - Max | 2 W |
| Frequency - Transition | 200MHz |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| 供应商器件封装 | TO-220NIS |
环境
| 工作温度 | 150°C (TJ) |
|---|