通用
| 基础料号 | 2SA1362 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 8mA, 400mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 120MHz |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| 供应商器件封装 | S-Mini |
环境
| 工作温度 | 150°C (TJ) |
|---|