通用
| 基础料号 | 2SA1182 |
|---|---|
| 制造商 | Toshiba Semiconductor and Storage |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 1V |
| Power - Max | 150 mW |
| Frequency - Transition | 200MHz |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| 供应商器件封装 | S-Mini |
环境
| 工作温度 | 125°C (TJ) |
|---|