1SS193S,LF(D

Toshiba Semiconductor and Storage

1SS193S,LF(D

Datasheet

模拟与电源

DIODE GEN PURP 80V 100MA S-MINI

停产/老旧TO-236-3, SC-59, SOT-23-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1SS193
Capacitance @ Vr, F3pF @ 0V, 1MHz
制造商Toshiba Semiconductor and Storage
安装类型Surface Mount
Product StatusObsolete
Reverse Recovery Time (trr)4 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 mA
Current - Average Rectified (Io)100mA
Current - Reverse Leakage @ Vr500 nA @ 80 V
速度Small Signal =< 200mA (Io), Any Speed

机械

封装Tape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
供应商器件封装S-Mini

环境

Operating Temperature - Junction125°C (Max)