通用
| 基础料号 | CSD86360Q5 |
|---|---|
| 配置 | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 12.5 |
| 制造商 | Texas Instruments |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| 系列 | NexFET™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |