通用
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V |
|---|---|
| 基础料号 | CSD86356 |
| 配置 | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate, 5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 4.5V, 19.3nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12.5V, 2510pF @ 12.5V |
| 制造商 | Texas Instruments |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | NexFET™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.85V @ 250µA, 1.5V @ 250µA |