通用
| Rds On (Max) @ Id, Vgs | 49mOhm @ 3A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 10 V |
| 制造商 | Texas Instruments |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | NexFET™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |