通用
| Rds On (Max) @ Id, Vgs | 12.2mOhm @ 2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 4 V |
| 制造商 | Texas Instruments |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | NexFET™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |