CSD17313Q2

Name: CSD17313Q2
Brand: Texas Instruments

模拟与电源

MOSFET N-CH 30V 5A 6WSON

在产6-WDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	30mOhm @ 4A, 8V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 15 V
制造商	Texas Instruments
安装类型	Surface Mount
Product Status	Active
系列	NexFET™
技术	MOSFET (Metal Oxide)
Vgs (Max)	+10V, -8V
Vgs(th) (Max) @ Id	1.8V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
最大功耗	2.3W (Ta)

工作温度	-55°C~150°C(TJ)