TSM900N06CW RPG

Name: TSM900N06CW RPG
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET N-CHANNEL 60V 6A SOT223

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	525 pF @ 30 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
最大功耗	7.8W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)

工作温度	-55°C ~ 150°C (TJ)