TSM900N06CP

Name: TSM900N06CP
Brand: Taiwan Semiconductor Corporation

模拟与电源

60V, 11A, SINGLE N-CHANNEL POWER

在产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	90mOhm @ 6A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 15 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
包装	Tape & Reel (TR)
产品状态	在产
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
最大功耗	25W (Tc)

Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装	TO-252 (DPAK)

工作温度	150°C (TJ)