TSM650P02CX RFG

Name: TSM650P02CX RFG
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET P-CHANNEL 20V 4.1A SOT23

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	65mOhm @ 3A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	515 pF @ 10 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	800mV @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
最大功耗	1.56W (Tc)

工作温度	150°C (TJ)