TSM650N15CS

Name: TSM650N15CS
Brand: Taiwan Semiconductor Corporation

模拟与电源

150V, 9A, SINGLE N-CHANNEL POWER

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	65mOhm @ 4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1783 pF @ 75 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	150 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	4A (Ta), 9A (Tc)
最大功耗	2.2W (Ta), 12.5W (Tc)

工作温度	-55°C ~ 150°C (TJ)