TSM5055DCR

Name: TSM5055DCR
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET 2N-CH 30V 107A 8DFN

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
基础料号	TSM5055
配置	2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V, 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 15V, 2550pF @ 15V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Power - Max	2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

工作温度	-55°C ~ 150°C (TJ)