TSM4ND60CI C0G

Name: TSM4ND60CI C0G
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET N-CH 600V 4A ITO220

已停产TO-220-3 Full Pack, Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	582 pF @ 50 V
制造商	Taiwan Semiconductor Corporation
安装类型	Through Hole
Product Status	Discontinued at
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.8V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
最大功耗	41.6W (Tc)

工作温度	-55°C~150°C(TJ)