TSM301K12CQ RFG

Taiwan Semiconductor Corporation

TSM301K12CQ RFG

Datasheet

模拟与电源

MOSFET P-CH 20V 4.5A 6TDFN

已停产6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs94mOhm @ 2.8A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5.2 pF @ 6 V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id500mV @ 250µA (Min)

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
最大功耗6.5W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
供应商器件封装6-TDFN (2x2)

环境

工作温度-55°C ~ 150°C (TJ)