通用
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 249 pF @ 25 V |
| 制造商 | Taiwan Semiconductor Corporation |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |