TSM2N60SCW RPG

Name: TSM2N60SCW RPG
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET N-CH 600V 600MA SOT223

停产/老旧TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5Ohm @ 600mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 25 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	600mA (Tc)
最大功耗	2.5W (Tc)

工作温度	-55°C ~ 150°C (TJ)