TSM2537CQ RFG

Taiwan Semiconductor Corporation

TSM2537CQ RFG

Datasheet

模拟与电源

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

在产6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
基础料号TSM2537
配置N and P-Channel
FET FeatureLogic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds677pF @ 10V, 744pF @ 10V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C11.6A (Tc), 9A (Tc)
Power - Max6.25W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
供应商器件封装6-TDFN (2x2)

环境

工作温度-55°C ~ 150°C (TJ)