TSM250N02DCQ RFG

Taiwan Semiconductor Corporation

TSM250N02DCQ RFG

Datasheet

模拟与电源

MOSFET 2N-CH 20V 5.8A 6TDFN

在产6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs25mOhm @ 4A, 4.5V
基础料号TSM250
配置2 N-Channel (Dual)
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds775pF @ 10V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800mV @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Power - Max620mW (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
供应商器件封装6-TDFN (2x2)

环境

工作温度-55°C ~ 150°C (TJ)