TSM1N45DCS RLG

Taiwan Semiconductor Corporation

TSM1N45DCS RLG

模拟与电源

MOSFET N-CH 450V 500MA 8SOP

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.25Ohm @ 250mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds185 pF @ 25 V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±50V
Vgs(th) (Max) @ Id4.9V @ 250mA

电气

漏源电压450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
最大功耗900mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度-55°C ~ 150°C (TJ)