TSM16ND50CI C0G

Name: TSM16ND50CI C0G
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET N-CH 500V 16A ITO220

在产TO-220-3 Full Pack, Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	350mOhm @ 4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2551 pF @ 50 V
制造商	Taiwan Semiconductor Corporation
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 250µA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
最大功耗	59.5W (Tc)

工作温度	-55°C~150°C(TJ)