TSM160P02CS

Taiwan Semiconductor Corporation

TSM160P02CS

Datasheet

模拟与电源

20, -11, SINGLE P-CHANNEL

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs16mOhm @ 6A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 15 V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
最大功耗2.5W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度-55°C ~ 150°C (TJ)