TQM110NB04CR RLG

Name: TQM110NB04CR RLG
Brand: Taiwan Semiconductor Corporation

模拟与电源

MOSFET N-CH 40V 12A/54A 8PDFNU

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1352 pF @ 20 V
制造商	Taiwan Semiconductor Corporation
安装类型	Surface Mount, Wettable Flank
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.8V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 54A (Tc)
最大功耗	3.1W (Ta), 68W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)