TQM032NH04CR RLG

Taiwan Semiconductor Corporation

TQM032NH04CR RLG

Datasheet

模拟与电源

40V, 81A, SINGLE N-CHANNEL POWER

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.2mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs67.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4344 pF @ 25 V
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount, Wettable Flank
Product StatusActive
系列PerFET™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 81A (Tc)
最大功耗115W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101