HS1ML

Taiwan Semiconductor Corporation

HS1ML

Datasheet

模拟与电源

DIODE GEN PURP 1KV 1A SUB SMA

已停产DO-219AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号HS1M
Capacitance @ Vr, F15pF @ 4V, 1MHz
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusNot For New Designs
Reverse Recovery Time (trr)75 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 1000 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseDO-219AB
供应商器件封装Sub SMA

环境

Operating Temperature - Junction-55°C ~ 150°C