ESH1JM RSG

Taiwan Semiconductor Corporation

ESH1JM RSG

Datasheet

模拟与电源

DIODE GEN PURP 600V 1A MICRO SMA

停产/老旧2-SMD, Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号ESH1
Capacitance @ Vr, F3pF @ 4V, 1MHz
制造商Taiwan Semiconductor Corporation
安装类型Surface Mount
Product StatusObsolete
Reverse Recovery Time (trr)25 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / Case2-SMD, Flat Lead
供应商器件封装Micro SMA

环境

Operating Temperature - Junction-55°C ~ 150°C