通用
| 基础料号 | STX112 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Power - Max | 1.2 W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| 供应商器件封装 | TO-92-3 |
环境
| 工作温度 | 150°C (TJ) |
|---|