STULED656

Name: STULED656
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 650V 6A IPAK

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.3Ohm @ 2.7A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	895 pF @ 100 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 50µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
最大功耗	70W (Tc)

工作温度	150°C (TJ)