STSJ60NH3LL

STMicroelectronics

STSJ60NH3LL

Datasheet

模拟与电源

MOSFET N-CH 30V 60A 8SOIC

停产/老旧8-SOIC (0.154", 3.90mm Width) Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs5.7mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1810 pF @ 25 V
制造商STMicroelectronics
安装类型Surface Mount
Product StatusObsolete
系列STripFET™
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
最大功耗3W (Ta), 50W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
供应商器件封装8-SOIC-EP

环境

工作温度-55°C ~ 150°C (TJ)