STSJ100NHS3LL

STMicroelectronics

STSJ100NHS3LL

模拟与电源

MOSFET N-CH 30V 100A 8SOIC

停产/老旧8-SOIC (0.154", 3.90mm Width) Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.2mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V
制造商STMicroelectronics
安装类型Surface Mount
Product StatusObsolete
系列STripFET™ III
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
最大功耗3W (Ta), 70W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
供应商器件封装8-SOIC-EP

环境

工作温度-55°C ~ 150°C (TJ)