STQ2NK60ZR-AP

STMicroelectronics

STQ2NK60ZR-AP

Datasheet

模拟与电源

MOSFET N-CH 600V 400MA TO92-3

停产/老旧TO-226-3, TO-92-3 (TO-226AA) Formed Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8Ohm @ 700mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
系列SuperMESH™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
最大功耗3W (Tc)

机械

封装Cut Tape (CT) Tape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
供应商器件封装TO-92-3

环境

工作温度-55°C ~ 150°C (TJ)