STQ2LN60K3-AP

Name: STQ2LN60K3-AP
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 600V 600MA TO92-3

在产TO-226-3, TO-92-3 (TO-226AA) Formed Leads模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.5Ohm @ 1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 50 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Active
系列	SuperMESH3™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 50µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	600mA (Tc)
最大功耗	2.5W (Tc)

工作温度	150°C (TJ)