STP11NM60FDFP

STMicroelectronics

STP11NM60FDFP

Datasheet

模拟与电源

MOSFET N-CH 600V 11A TO220FP

在产TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusActive
系列FDmesh™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
最大功耗35W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220FP