STI55NF03L

STMicroelectronics

STI55NF03L

Datasheet

模拟与电源

MOSFET N-CH 30V 55A I2PAK

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs13mOhm @ 27.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1265 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
系列STripFET™ II
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
最大功耗80W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装I2PAK

环境

工作温度-60°C ~ 175°C (TJ)