STI11NM80

Name: STI11NM80
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 800V 11A I2PAK

在产TO-262-3 Long Leads, I2PAK, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	400mOhm @ 5.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1630 pF @ 25 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Active
系列	MDmesh™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
最大功耗	150W (Tc)

工作温度	-65°C ~ 150°C (TJ)